APPARATUS AND METHOD FOR IN-SITU THICKNESS AND STOICHIOMETRYMEASUREMENT OF THIN FILMS

摘要

An apparatus and method for using .alpha.-particle energy loss to measure th e thickness and stoichiometry of films grown by molecular beam epitaxy and other methods. The apparatus for measuring the thickness of films grown on a substrate in a growth chamber, comprises a protective housing having an aperture opening into the growth chamber, a solid state detector disposed in the protective housing, a shutter for opening and closing the aperture, a shield disposed in the housing betwe en the aperture and the solid state detector for shielding the detector, and a calibration source disposed between the shield and the detector for calibrating the measurements made by the detector. A second calibration source disposed between the shutter and the shield, for measuring deposition on the shield.