发明名称 |
Nonvolatile semiconductor memory device and data write method thereof |
摘要 |
A semiconductor integrated circuit device includes an nonvolatile semiconductor memory cell and a write control circuit. The write control circuit supplies first and second pre-programming pulses and staircase programming pulses to the memory cell independently of the write statuses thereof. The second pre-programming pulse is higher than the first pre-programming pulse by a first potential difference. The staircase programming pulses have an initial voltage lower than the second pre-programming pulse and increase the voltage at a rate of a second potential difference per pulse. The second potential difference is smaller than the first potential difference.
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申请公布号 |
US6954378(B2) |
申请公布日期 |
2005.10.11 |
申请号 |
US20040938932 |
申请日期 |
2004.09.09 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TANAKA TOMOHARU |
分类号 |
G11C16/02;G11C8/02;G11C16/04;G11C16/10;G11C16/12;H01L31/0328;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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