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发明名称
Fabrication method of InAlGaN p-n diode
摘要
申请公布号
KR100519641(B1)
申请公布日期
2005.10.07
申请号
KR20010047805
申请日期
2001.08.08
申请人
发明人
分类号
H01L33/00;H01L33/32;(IPC1-7):H01L33/00
主分类号
H01L33/00
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