Method of forming capacitor provied with TaON dielectric layer,申请号KR19990026503-传众专利搜索

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发明名称	Method of forming capacitor provied with TaON dielectric layer
摘要
申请公布号	KR100519514(B1)	申请公布日期	2005.10.07
申请号	KR19990026503	申请日期	1999.07.02
申请人		发明人
分类号	H01L21/318;H01L27/108;H01L21/31;H01L21/8242;(IPC1-7):H01L27/108	主分类号	H01L21/318
代理机构		代理人
主权项
地址

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