| 发明名称 |
HIGH-VOLTAGE OPERATION FIELD EFFECT TRANSISTOR, ITS BIAS CIRCUIT AND ITS HIGH-VOLTAGE CIRCUIT |
| 摘要 |
PROBLEM TO BE SOLVED: To form a high-voltage operation field effect transistor in IC, utilizing a transistor structure for standard power voltage of IC or process technology. SOLUTION: In order to increase the operating voltage of the field effect transistor, measures are taken, in which a gate is divided and with electric potentials closer to the drain electric potential and is made changeable, depending on the drain electric potential are supplied to the division gates. COPYRIGHT: (C)2006,JPO&NCIPI
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| 申请公布号 |
JP2005277378(A) |
申请公布日期 |
2005.10.06 |
| 申请号 |
JP20040318751 |
申请日期 |
2004.11.02 |
| 申请人 |
SEIKO INSTRUMENTS INC;HAYASHI YUTAKA |
发明人 |
HAYASHI YUTAKA;HASEGAWA TAKASHI;YOSHIDA YOSHIFUMI;OSANAI JUN |
| 分类号 |
H01L27/04;H01L21/822;H01L21/8234;H01L21/8238;H01L27/06;H01L27/08;H01L27/092;H01L27/12;H01L29/76;H01L29/78;H01L29/786;(IPC1-7):H01L21/823;H01L21/823 |
主分类号 |
H01L27/04 |
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