发明名称 HIGH-VOLTAGE OPERATION FIELD EFFECT TRANSISTOR, ITS BIAS CIRCUIT AND ITS HIGH-VOLTAGE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To form a high-voltage operation field effect transistor in IC, using a transistor structure for standard power voltage of IC or process technology. SOLUTION: For making the operating voltage of the field effect transistor large, a measure for installing potential distribution varying according to the drain potential in a gate is set. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005277377(A) 申请公布日期 2005.10.06
申请号 JP20040318750 申请日期 2004.11.02
申请人 SEIKO INSTRUMENTS INC;HAYASHI YUTAKA 发明人 HAYASHI YUTAKA;HASEGAWA TAKASHI;YOSHIDA YOSHIFUMI;OSANAI JUN
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L21/8238;H01L27/06;H01L27/08;H01L27/092;H01L29/423;H01L29/76;H01L29/78;H01L29/786;(IPC1-7):H01L29/78;H01L21/823 主分类号 H01L27/04
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