发明名称 |
HIGH-VOLTAGE OPERATION FIELD EFFECT TRANSISTOR, ITS BIAS CIRCUIT AND ITS HIGH-VOLTAGE CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To form a high-voltage operation field effect transistor in IC, using a transistor structure for standard power voltage of IC or process technology. SOLUTION: For making the operating voltage of the field effect transistor large, a measure for installing potential distribution varying according to the drain potential in a gate is set. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2005277377(A) |
申请公布日期 |
2005.10.06 |
申请号 |
JP20040318750 |
申请日期 |
2004.11.02 |
申请人 |
SEIKO INSTRUMENTS INC;HAYASHI YUTAKA |
发明人 |
HAYASHI YUTAKA;HASEGAWA TAKASHI;YOSHIDA YOSHIFUMI;OSANAI JUN |
分类号 |
H01L27/04;H01L21/822;H01L21/8234;H01L21/8238;H01L27/06;H01L27/08;H01L27/092;H01L29/423;H01L29/76;H01L29/78;H01L29/786;(IPC1-7):H01L29/78;H01L21/823 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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