| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for measuring a leakage voltage of a dielectric covering an upper surface of a semiconductor wafer using a single frequency. SOLUTION: A conductive probe 20 is moved, being contacted with the dielectric 4, and an electrical stimulus is applied between a probe tip 28 and a semiconductor wafer 8 in a shape of AC voltage of a fixed frequency by a fixed amplitude superimposed to a DC voltage swept from a starting voltage to a ending voltage thereby, the leakage current of the dielectric covering the semiconductor wafer can be determined. In sweeping of DC voltage, a value of conductance relating to the dielectric and semiconductor wafer can be determined by a phase angle between the AC current generated by the applied AC voltage and the AC voltage. Then, the leakage current of the dielectric can be determined from the value of conductance determined like this. COPYRIGHT: (C)2006,JPO&NCIPI
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