MANUFACTURING METHOD FOR SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a gate insulating film for a semiconductor device in which the penetration of a boron through the insulating film is suppressed and the film thickness equivalent to an oxide film thickness is reduced. SOLUTION: The semiconductor device comprises an oxide film 10 formed on a semiconductor board 1, a high dielectric film 2 formed on the oxide film 10, and a nitrogen film 9 formed on the high dielectric film 2. According to a manufacturing method for the semiconductor device to be provided, the nitrogen film 9 is subjected to a heat treatment under a nitrogenous atmosphere after being formed. COPYRIGHT: (C)2006,JPO&NCIPI