发明名称 NANOWIRE AND ITS MANUFACTURING METHOD, SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide orientation-controlled nanowires, because wires fabricated using prior art orientation-control is difficult and is difficult to be adapted as nanofine lines for electronic devices. SOLUTION: In this invention, a nano wire 1 is formed on a silicon crystal substrate 3 and composes silicides extending along a crystal orientation on the substrate from an insular nickel 2 arranged on the above substrate 3. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005277182(A) 申请公布日期 2005.10.06
申请号 JP20040089609 申请日期 2004.03.25
申请人 SHARP CORP 发明人 YAMANAKA MIKIHIRO;NISHIURA SHUJI;KUDO ATSUSHI
分类号 H01L21/285;H01L21/3205;(IPC1-7):H01L21/285;H01L21/320 主分类号 H01L21/285
代理机构 代理人
主权项
地址
您可能感兴趣的专利