发明名称 |
NANOWIRE AND ITS MANUFACTURING METHOD, SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide orientation-controlled nanowires, because wires fabricated using prior art orientation-control is difficult and is difficult to be adapted as nanofine lines for electronic devices. SOLUTION: In this invention, a nano wire 1 is formed on a silicon crystal substrate 3 and composes silicides extending along a crystal orientation on the substrate from an insular nickel 2 arranged on the above substrate 3. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2005277182(A) |
申请公布日期 |
2005.10.06 |
申请号 |
JP20040089609 |
申请日期 |
2004.03.25 |
申请人 |
SHARP CORP |
发明人 |
YAMANAKA MIKIHIRO;NISHIURA SHUJI;KUDO ATSUSHI |
分类号 |
H01L21/285;H01L21/3205;(IPC1-7):H01L21/285;H01L21/320 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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