MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device wherein uniformity of silicidation is improved and dispersion of silicide resistance is made low by improving pretreatment when a silicide layer is formed. SOLUTION: The manufacturing method of the semiconductor device includes a process to remove an organic substance from a semiconductor region, a process to remove an oxide film formed on a surface of the semiconductor region, and a process to dry without using an organic solvent as a drying treatment, before the silicide layer is formed at the semiconductor region with a line width of 50nm or less. COPYRIGHT: (C)2006,JPO&NCIPI