发明名称 THIN FILM PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a conductor pattern forming method capable of eliminating residuals of a conductor film and resist, generation of burrs of a conductor pattern, defects such as resist peeling or the like, further shortening a peeling operation in a liftoff process, and accurately forming a fine conductor pattern. SOLUTION: During the liftoff process which is the most important process in the conductor pattern forming method, an entire substrate 1 is held by a chuck 10 and rotated together with the chuck 10 at the rotation speedωof 1,000-1,500 rpm. While a nozzle 11 is repeatedly moved at a speed v of approximately 10 mm/s on the chuck 10 under these conditions, a resist stripper 12 is ejected from the spray port 11a of the nozzle 11 while pressurized by a pressure of approximately 10 MPa and blown onto the substrate 1. The resist stripper 12 is thus spread over entirely and to every corner of the substrate 1, and the burrs and residuals of the conductor film 9 are forcibly removed. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005277027(A) 申请公布日期 2005.10.06
申请号 JP20040086985 申请日期 2004.03.24
申请人 ASAP:KK 发明人 OSAWA MITSUAKI;OSAWA MAKOTO
分类号 B05D3/12;H01L21/027;H01L21/28;H01L21/306;H01L21/3205;(IPC1-7):H01L21/027;H01L21/320 主分类号 B05D3/12
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