| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor deposition system in which the influence of the contamination to a vapor deposition film can be reduced based on the finding on a relation between the contamination and the pressure in a chamber in a vapor deposition process. SOLUTION: The phenomenon that the adsorption of organic materials drastically lowers as compared with the case the gaseous pressure in the chamber is maintained in a viscous flow region and the case the pressure is maintained in a molecular flow region is found and based on the phenomenon, the gaseous pressure is so controlled as to be maintained in the molecular flow region at the time of forming the vapor deposited thin film and to be maintained in the viscous flow region at the time of the non-deposition, and thereby the vapor deposited thin film can be formed with the reduced contamination with the organic materials. COPYRIGHT: (C)2006,JPO&NCIPI
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