发明名称 |
Halogen gettering method for forming field effect transistor (FET) device |
摘要 |
A thermal oxidation method for forming a gate dielectric layer for use within a field effect transistor device employs a thermal oxidizing atmosphere comprising a halogen getter material. By employing the halogen getter material, the field effect transistor device is formed with enhanced performance, in particular with respect to negative bias temperature instability lifetime.
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申请公布号 |
US2005218463(A1) |
申请公布日期 |
2005.10.06 |
申请号 |
US20040813786 |
申请日期 |
2004.03.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HAO CHING-CHEN;CHEN CHAO-CHI;SHEN CHIH-HENG;HSIEH CHI-HSUN |
分类号 |
H01L21/00;H01L21/28;H01L21/8234;H01L29/51;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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