| 摘要 |
A fast switching diode includes an n- layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A converted region is provided proximate the upper surface of the n- layer. The converted region includes platinum and has a first depth. The converted region has a platinum concentration that is substantially greater than an n-type dopant concentration in the converted region. First and second n+ regions are provided proximate the first and second edges of the n- layer, respectively, and extend from the upper surface of the n- layer to second and third depths, respectively. Each of the second and third depths is greater than the first depth to reduce leakage current. A first electrode is provided proximate the upper surface of the n- layer. A second electrode is provided proximate the lower surface of the n- layer.
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