发明名称 Method of controlling trimming of a gate electrode structure
摘要 A method and processing tool are provided for controlling trimming of a gate electrode structure containing a gate electrode layer with a first dimension by determining the first dimension of the gate electrode structure, choosing a target trimmed dimension, feeding forward the first dimension and the target trimmed dimension to a process model to create a set of process parameters, performing a trimming process on the gate electrode structure, including controlling the set of process parameter, trimming the gate electrode structure, and measuring a trimmed dimension of the gate electrode structure. The trimming process may be repeated at least once until the target trimmed dimension is obtained, where the trimmed dimension may be fed backward to the process model to create a new set of process parameters.
申请公布号 US2005221513(A1) 申请公布日期 2005.10.06
申请号 US20040812952 申请日期 2004.03.31
申请人 TOKYO ELECTRON LIMITED 发明人 YUE HONGYU;CHEN LEE
分类号 G05B19/418;H01L21/28;H01L21/66;(IPC1-7):H01L21/66;H01L21/476;H01L21/320;G01R31/26 主分类号 G05B19/418
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