发明名称 Plasma processing apparatus
摘要 The plasma processing apparatus includes main electrodes 5, 31 opposed to each other with a plasma processing space 15 interposed therebetween. The plasma processing apparatus further has a side electrode 6 opposed to side faces 5 B- 1, 5 B- 2 of the main electrode 5, as well as a side electrode 32 opposed to side faces 31 B- 1, 31 B- 2 of the main electrode 31. Therefore, in addition to the plasma processing space 15 between the main electrode 5 and the main electrode 31, an electric field can be formed in spaces between the side faces of the main electrodes 5, 31 and the side electrodes 6, 32, the spaces serving as predischarge areas 16 - 1, 16 - 2. By this electric field, processing gas present in the predischarge areas 16 - 1, 16 - 2 can be transformed into plasma. Electrons and excitation species of the plasma generated in these predischarge areas 16 - 1, 16 - 2 can be supplied directly to the plasma processing space 15.
申请公布号 US2005217798(A1) 申请公布日期 2005.10.06
申请号 US20050088211 申请日期 2005.03.22
申请人 SHARP KABUSHIKI KAISHA 发明人 SUGIYAMA AKIRA;KITAMURA SHUHICHI;MURAKAMI KOJI;TAKAHASHI DAISUKE;YOSHIMOTO SHOHZOH
分类号 H05H1/24;C23C16/50;C23F1/00;H01J37/32;H01L21/304;H01L21/3065;(IPC1-7):C23F1/00 主分类号 H05H1/24
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