| 摘要 |
To provide a manufacturing method of a semiconductor device, which can form an LDD (lightly doped drain) structure in a self alignment manner, can suppress the length of a doped region, and can prevent characteristics from being unstabilized when oversaturated hydrogen atoms are implanted, a semiconductor device, a substrate for electro-optical device, an electro-optical device, and an electronic apparatus. A manufacturing method of a semiconductor device comprises an electrode formation step of forming an electrode above a semiconductor layer, an insulating film formation step of forming insulating films containing nitrogen on the electrode, and a heat treatment step of performing a heat treatment under an atmosphere containing vapor, oxygen, or hydrogen to form nitrogen concentration distributions in the insulating films.
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