| 摘要 |
The present invention provides for a method of fabricating a semiconductor device comprising a non-selectively grown SiGe(C) heterojunction bipolar transistor including the steps of forming an insulating layer ( 12, 40 ) on a substrate and providing a layer structure including a conductive layer ( 14, 42 ) on the insulating layer ( 12, 40 ), etching a transistor area opening ( 12, 44 ) through the conductive layer ( 14, 42 ), depositing a SiGe base layer ( 24, 46 ) on the inner wall of the transistor area opening ( 22, 44 ) and forming an insulator ( 32, 52 ) on an upper surface so as to fill the transistor area opening wherein prior to the filling step, a nitride layer ( 30, 50 ) is formed as an inner layer of the transistor area opening ( 22, 44 ).
|
