| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid imaging device which can form antireflection film in an exact location. SOLUTION: The manufacturing method of the solid imaging device comprises the processes of: (1) forming an antireflection film 17 covering a region including gate electrodes 13 and a space 14 between the electrodes on a substrate 2 which comprises at least two gate electrodes 13 formed on the front surface and an interlayer dielectric 15 covering the region including the electrodes 13 and the space 14 between the electrodes; (2) forming a protective layer 21 which fills the space 14 between the gate electrodes; (3) and etching and patterning the antireflection film 17 using the protective layer 21 and the interlayer dielectric 15 as masks. The protective layer 21 is formed so that it may fill the space 14 between the gate electrodes. In this method, a photolithography process is not required. Therefore, a misregistration, which is caused by alignment deviation, of the antireflection film 17 patterned does not occur. COPYRIGHT: (C)2006,JPO&NCIPI
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