| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having the metal-insulating film-semiconductor (MIS) structure, consisting of an epitaxial wafer having a hexagonal system semiconductor region with superior characteristics, by improving the insulation breakdown characteristic of a gate insulation film formed on the hexagonal system semiconductor region. <P>SOLUTION: The semiconductor device has the metal-insulating film-semiconductor (MIS) structure, consisting of an epitaxial wafer having the hexagonal system semiconductor region with excellent properties, by improving the insulating breakdown characteristics of the gate insulating film formed on the hexagonal system semiconductor region. Further, the device has the metal-insulating film semiconductor (MIS) structure on the epitaxial wafer having the hexagonal system semiconductor region, wherein in-plane dislocation density is 1,000/cm<SP>2</SP>or lower and a density of dislocations including in-plane dislocation is 10,000/cm2 or lower, and has the hexagonal system semiconductor region, having a total number of dislocations of 10 or smaller within a region wherein the gate insulation film is formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
