发明名称 FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a field effect transistor, capable of stably forming an organic semiconductor layer with high crystallinity and orientation over a wide temperature range, from a low temperature, and also exhibiting high mobility. SOLUTION: In the field effect transistor, an organic semiconductor layer contains at least a compound, having a monobenzoporphyrin skeleton expressed by a general Formula (1), where R1 and R2 respectively refer to one selected among a hydrogen atom, halogen atom, hydroxyl group or 1C-12C alkyl group, alkenyl group, oxyalkyl group, thioalkyl group, alykyl ester group and aryl group, at least two of R2 are other than the hydrogen atoms, R3 is at least one selected from the hydrogen atoms and aryl group, and M refers to two hydrogen atoms, metallic atoms or a metal oxide. Adjacent R1 and R2 may be the same as each other or different from each other. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005277029(A) 申请公布日期 2005.10.06
申请号 JP20040087077 申请日期 2004.03.24
申请人 CANON INC 发明人 MASUMOTO AKANE;MIURA DAISUKE;NAKAYAMA HIROHARU
分类号 C07D487/22;C07F1/08;H01L29/786;H01L51/00;H01L51/05;(IPC1-7):H01L51/00 主分类号 C07D487/22
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