| 摘要 |
PROBLEM TO BE SOLVED: To effectively utilize a channel region by intending to uniformize a mesa etching trench in an SIThy for example. SOLUTION: A cathode arrangement region 12 disposed at the center of a semiconductor device 10 is divided into two compartments 12A, 12B. The one compartment 12A of the two compartments 12A, 12B includes a plurality of cathode segments 18 and a gate assembly 20 both formed therein, while the other compartment 12B includes a plurality of cathode segments 18. The gate assembly 20 includes a plurality of gate segments 24 assembled therein. The mesa etching trench between the segments is formed within a range beyond the shortest etching trench width and within the range of the width of a disposition pitch of each segment. COPYRIGHT: (C)2006,JPO&NCIPI
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