| 摘要 |
PROBLEM TO BE SOLVED: To provide a high voltage generation circuit and its method capable of increasing the efficiency of a charge pump and guaranteeing the last clock outputted from a ring oscillator in the high voltage generation circuit. SOLUTION: This high voltage generation circuit is provided with a high voltage level sensing part for comparing a high voltage with a reference voltage in a semiconductor memory device to output an oscillator control signal in a first logical level, a clock feedback part for receiving a clock enable signal and an inverted pumping control signal so as to be able to maintain an oscillator enable signal in the first logical level for a prescribed period of time, an oscillator for generating a pumping control signal that periodically performs toggling and outputting the inverse pumping control signal to the clock feedback part, and a charge pumping block for boosting up a high voltage in response to the pumping control signal. COPYRIGHT: (C)2006,JPO&NCIPI
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