发明名称 |
Nitride semiconductor light-emitting device and process for producing the same |
摘要 |
Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.
|
申请公布号 |
US2005218416(A1) |
申请公布日期 |
2005.10.06 |
申请号 |
US20040898204 |
申请日期 |
2004.07.26 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
CHO DONG H.;KOIKE MASAYOSHI;IMAI YUJI;KIM MIN H.;OH BANG W.;HAHM HUN J. |
分类号 |
H01L21/00;H01L21/20;H01L33/06;H01L33/12;H01L33/32;H01L33/42;(IPC1-7):H01L21/00;H01L33/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|