发明名称 |
Floating gate memory cells with increased coupling radio |
摘要 |
A method to improve the coupling ratio between a control gate ( 18 ) and a floating gate ( 14 ) of a floating gate non-volatile semiconductor device is described. In a stacked gate floating gate transistor according to the invention, a conductive spacer ( 24 ) is used at both sides of the stack. The conductive spacer ( 24 ) is galvanically connected to the control gate ( 18 ), preferably by means of a conductive layer ( 34 ), whereas it is separated from the floating gate ( 14 ) by means of an insulating layer ( 22 ). The capacitance (C 1 , C 2 ) between both conductive spacers ( 24 ) and the side walls of the floating gate ( 14 ) adds up to the normal capacitance between control gate ( 18 ) and floating gate ( 14 ).
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申请公布号 |
US2005218445(A1) |
申请公布日期 |
2005.10.06 |
申请号 |
US20050513874 |
申请日期 |
2005.11.05 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
VAN DUUREN MICHIEL J.;VAN SCHAIJK ROBERTUS THEODORUS F. |
分类号 |
H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L21/336;H01L29/76 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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