| 摘要 |
A magnetic memory device having MRAM elements the operations of which are ensured without any influence of a strong external magnetic field on the internal leakage magnetic field. The MRAM elements (30) magnetically shielded by magnetic shield layers (33, 34) are disposed in intermediate regions (41), avoiding the end regions (43) and the central region (42) of the magnetic shield layers (33, 34). The magnetic shield effect is nullified in the end regions (43), and the internal leakage magnetic field strength is great in the central regions (42). Therefore in the intermediate regions (41) the MRAM elements (30) are not influenced by the internal leakage magnetic field and normally operate. |
