发明名称 ALUMINUM NITRIDE MATERIALS AND MEMBERS USED FOR THE PRODUCTION OF SEMICONDUCTORS
摘要 An object of the present invention is to provide an aluminum nitride material having a high thermal conductivity and reduced volume resistivity at room temperature. An aluminum nitride material has interconnected intergranular phase functioning as electrical conductive phase. The material has a content of the conductive phase of not higher than 20 percent, calculated according to the following formula based on an X-ray diffraction profile. Content of the conductive phase (%) = (Integrated strength of the strongest peak of the conductive phase/Integrated strength of the strongest peak of aluminum nitride phase) x 100. Alternatively, the material has an electric current response index of not lower than 0.9 and not higher than 1.1 defined according to the following formula. Electric current response index = (Electric current at 5 seconds after a voltage is applied/Electric current at 60 seconds after a voltage is applied).
申请公布号 KR100518906(B1) 申请公布日期 2005.10.06
申请号 KR20030024640 申请日期 2003.04.18
申请人 发明人
分类号 C04B35/581;(IPC1-7):C04B35/581 主分类号 C04B35/581
代理机构 代理人
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