| 摘要 |
<P>PROBLEM TO BE SOLVED: To keep oxide contamination on the surface of a substrate, after polymetal gate working at a low level. <P>SOLUTION: A gate electrode comprising a tungsten (W) film is formed; then after performing re-oxidation treatment, the oxide contamination in a gate insulating film during ion implantation of impurities is prevented from subjected to knock on, by wet cleaning the surface of a wafer, using water or liquid chemicals which have the property close to the borderline of a W-existing region and negative ions existing region of WO<SB>4</SB>, and exists in a region of reduction potential in a pH range of 6.5 to 12. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
