发明名称 MANUFACTURING METHOD FOR ORGANIC ELECTROLUMINESCENT ELEMENT, FORMING METHOD FOR ELECTRODE OR WIRING CONTAINING CONDUCTIVE OXIDE FILM, MANUFACTURING METHOD FOR ELECTRONIC APPARATUS, ORGANIC ELECTROLUMINESCENT ELEMENT, AND ELECTRONIC APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To solve the problem of the occurrence of exhibit defective level formation damage in organic material film when forming an electrode material on the organic material film by a reactive sputtering method. <P>SOLUTION: After laminating a conductive material protection film on the organic material film by non-reactive sputtering method, an electrode is formed from the surface of this film by conversion to an oxide film by making use of a plasma oxidation method using oxygen radical ions by a low electron temperature high-density plasma apparatus. Thus, by conversion of the organic material film to the oxide film in a state covered by a conductive protection film, exhibit defective level formation damage occurring in the organic material film can be controlled. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005276689(A) 申请公布日期 2005.10.06
申请号 JP20040089729 申请日期 2004.03.25
申请人 OMI TADAHIRO 发明人 OMI TADAHIRO;WAKAMATSU HIDETOSHI;HOSHI SAKUTARO
分类号 H05B33/10;C23C14/58;H01B13/00;H01L31/04;H01L51/50;H05B33/04;H05B33/14;H05B33/26;H05K3/02;(IPC1-7):H05B33/10 主分类号 H05B33/10
代理机构 代理人
主权项
地址