发明名称 |
Light emitting diode and fabrication method thereof |
摘要 |
A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor layer and the p-type semiconductor layer respectively. An AlGaInN thick film is on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface.
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申请公布号 |
US2005221527(A1) |
申请公布日期 |
2005.10.06 |
申请号 |
US20050069567 |
申请日期 |
2005.03.02 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
YEH WEN-YUNG;TSAY JENQ-DAR;CHUO CHANG-CHENG;HSU JUNG-TSUNG;CHI JIM-YONG |
分类号 |
H01L21/00;H01L33/22;H01L33/32;H01L33/62;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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