| 发明名称 |
METHOD FOR MANUFACTURING THIN FILM TRANSISTOR |
| 摘要 |
<p>An object of the invention is to provide a method for manufacturing a thin film transistor in a self-aligning manner by using the droplet discharging method regardless of the accuracy of a discharge position for a droplet discharging device. In view of the object, an organic resin film or the like is applied and processed into a predetermined shape by etch-back, exposure, development and the like. By utilizing the organic resin film with the predetermined shape as a mask, a semiconductor layer containing an impurity of one conductivity type is etched. By utilizing the organic resin film with the predetermined shape, regions with different wet</p> |
| 申请公布号 |
WO2005093813(A1) |
申请公布日期 |
2005.10.06 |
| 申请号 |
WO2005JP05063 |
申请日期 |
2005.03.15 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;MORISUE, MASAFUMI;FUJII, GEN |
发明人 |
MORISUE, MASAFUMI;FUJII, GEN |
| 分类号 |
H01L21/288;H01L21/3205;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/417;H01L29/45;H01L29/49;H01L29/786;(IPC1-7):H01L21/336;H01L21/320 |
主分类号 |
H01L21/288 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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