发明名称 SUBSTRATSCHICHTSCHNEIDVORRICHTUNG UND DAMIT VERBUNDENES VERFAHREN
摘要 <p>An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch located below the weakened area. The positioning member maintains the position of the substrate on a moveable support. A cutting mechanism having at least one blade is provided for contacting the substrate and inducing a cleaving wave therein. The cutting mechanism is operatively associated with the positioning member so that the as at least one blade contacts the annular notch, the positioning member prevents movement of the substrate and the moveable support moves away from the substrate to allow the cleaving wave to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.</p>
申请公布号 DE60205884(D1) 申请公布日期 2005.10.06
申请号 DE2002605884 申请日期 2002.04.10
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES, BERNIN 发明人 MARTINEZ, MURIEL;BARGE, THIERRY;SOUBIE, ALAIN;LAGAHE - BLANCHARD, CHRYSTELLE
分类号 B28D5/02;B28D5/00;H01L21/00;H01L21/304;(IPC1-7):B28D5/00;B32B35/00 主分类号 B28D5/02
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