发明名称 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
<p>A semiconductor multilayer portion (6) is formed by stacking an n-type gallium nitride compound semiconductor layer (3) and a p-type gallium nitride compound semiconductor layer (5) so as to form a light-emitting portion, and a light-transmitting conductive layer (7) is formed on a surface of the semiconductor multilayer portion. A part of the light-transmitting conductive layer is removed, and an upper electrode (8) is so formed to be in contact with the exposed surface of the semiconductor multilayer portion and the light-transmitting conductive layer. By providing the surface of the semiconductor multilayer portion which is exposed through an opening (7a) of the light-transmitting conductive layer with a current blocking means (10), current is significantly prevented from flowing into a part under the upper electrode while securing good adhesion between the upper electrode and the surface of the semiconductor multilayer portion. Consequently, there can be obtained a semiconductor light-emitting device using a gallium nitride compound wherein the external quantum efficiency is improved by suppressing light emission under the upper electrode while enhancing adhesion between the upper electrode and the semiconductor layer.</p> |
申请公布号 |
WO2005060013(A8) |
申请公布日期 |
2005.10.06 |
申请号 |
WO2004JP18810 |
申请日期 |
2004.12.16 |
申请人 |
ROHM CO., LTD;ITO, NORIKAZU;SONOBE, MASAYUKI;NAKAGAWA, DAISUKE |
发明人 |
ITO, NORIKAZU;SONOBE, MASAYUKI;NAKAGAWA, DAISUKE |
分类号 |
H01L33/06;H01L33/32;H01L33/42;H01S5/323;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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