发明名称 |
NON-MONOTONIC CURRENT VOLTAGE CHARACTERISTIC FUNCTION BODY AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a non-monotonic current voltage characteristic function body which has an affinity for a process of a silicon series semiconductor and has an excellent productivity. SOLUTION: A non-monotonic current voltage characteristic function body 100 has a conductive fine particle 102 composed of silver of nanometer in size in a silicon oxide film 101 pinched between a first electrode 111 and a second electrode 112, and varies so that a current voltage characteristic between the first electrode 111 and the second electrode 112 indicates a multiple negative resistance characteristic. The conductive fine particle 102 is formed by introducing silver into the silicon oxide film 101 by an ion implantation technique. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2005277041(A) |
申请公布日期 |
2005.10.06 |
申请号 |
JP20040087235 |
申请日期 |
2004.03.24 |
申请人 |
SHARP CORP;TSUJI HIROSHI;ISHIKAWA JUNZO |
发明人 |
ARAI NOBUTOSHI;HARADA MAOMI;ADACHI KOICHIRO;IWATA HIROSHI;TSUJI HIROSHI;ISHIKAWA JUNZO |
分类号 |
H01L29/88;(IPC1-7):H01L29/88 |
主分类号 |
H01L29/88 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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