发明名称 NON-MONOTONIC CURRENT VOLTAGE CHARACTERISTIC FUNCTION BODY AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a non-monotonic current voltage characteristic function body which has an affinity for a process of a silicon series semiconductor and has an excellent productivity. SOLUTION: A non-monotonic current voltage characteristic function body 100 has a conductive fine particle 102 composed of silver of nanometer in size in a silicon oxide film 101 pinched between a first electrode 111 and a second electrode 112, and varies so that a current voltage characteristic between the first electrode 111 and the second electrode 112 indicates a multiple negative resistance characteristic. The conductive fine particle 102 is formed by introducing silver into the silicon oxide film 101 by an ion implantation technique. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005277041(A) 申请公布日期 2005.10.06
申请号 JP20040087235 申请日期 2004.03.24
申请人 SHARP CORP;TSUJI HIROSHI;ISHIKAWA JUNZO 发明人 ARAI NOBUTOSHI;HARADA MAOMI;ADACHI KOICHIRO;IWATA HIROSHI;TSUJI HIROSHI;ISHIKAWA JUNZO
分类号 H01L29/88;(IPC1-7):H01L29/88 主分类号 H01L29/88
代理机构 代理人
主权项
地址