| 摘要 |
PROBLEM TO BE SOLVED: To provide the composition of a substrate for semiconductor devices capable of much more stabilization of the driver voltage of the mounted semiconductor devices. SOLUTION: The substrate for semiconductor devices is provided with a substrate 1, and an electrical insulating film 3 formed on at least one part of the surface of the substrate 1. The substrate 1 is composed of one sort of materials selected from among a group, including an alloy containing copper and tungsten, an alloy containing copper and molybdenum; an alloy containing copper, tungsten, and molybdenum; a composite material containing aluminum and silicon carbide; and a composite material containing silicon and silicon carbide. The electrical insulating film 3 includes a plurality of layers consisting of at least one sort of films selected from the group including a diamond-like carbon film, an aluminum oxide film, and a silicon oxide film. COPYRIGHT: (C)2006,JPO&NCIPI |
