| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of increasing an amount of charges accumulated in a capacitor. SOLUTION: To provide the semiconductor device which comprises a semiconductor substrate and the capacitor prepared on the semiconductor substrate which comprises a lower electrode 115, an dielectric film formed on the lower electrode and an upper electrode 117 which is formed on the dielectric film and has a plurality of hole pattern portions 201. COPYRIGHT: (C)2006,JPO&NCIPI
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