| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of obtaining high capacitance, and preferably, capable also of realizing a large number of residual polarized charges, even if further miniaturization is made, and to provide a method for manufacturing the same. SOLUTION: Two ferroelectric capacitors 21 having PZT films 23 are connected to a single MOS transistor 32. The electrodes of the ferroelectric capacitors 21 are arranged on the board main surface in parallel with the same. Accordingly, high capacitance is readily achieved. The [001] direction of the PZT films 23 is in parallel with straight lines each joining two electrodes. Accordingly, with the direction of field application matching the direction of the polarization axis, a large number of residual polarized charges are realized. COPYRIGHT: (C)2006,JPO&NCIPI
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