| 摘要 |
PROBLEM TO BE SOLVED: To provide an imaging function simple to control and excellent in performance for a 1-transistor/1-pixel type semiconductor imaging device. SOLUTION: A pixel is composed of a pixel transistor 25 which is a P-type FET and a photodiode 20, the well layer 4 of the pixel transistor 25 and the N-type well layer on the light-receiving side of the photodiode 20 are integratedly formed and electrically connected to each other, and the P-type well layer of the photodiode 20 is formed to surround the N-type well layers for the constitution of a floating well. The potential produced in the photodiode 20 is impressed on the pixel transistor 25 via the floating well, and the amount of light entering the photodiode 20 is determined by sensing changes in the threshold of the pixel transistor 25. COPYRIGHT: (C)2006,JPO&NCIPI
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