| 摘要 |
PROBLEM TO BE SOLVED: To reduce the parasitic capacity of a semiconductor device including a current constriction layer for limiting a current flow in an active layer, without degrading the reliability of the device. SOLUTION: A ridge structure 22 including the current constriction layer 10 at the center of an element is formed, by splitting the current constriction layer 10 by separate grooves 17a and 17b or by removing part of it. A bonding pad electrode 20 for jointing a wire is placed on a surface where the ridge structure 22 is placed at a region close to the structure 22, such as the bottom of the groove 17a. Since the area of the entire electrode is reduced by bringing the bonding pad electrode 20 as close to a light emitting section as possible, the parasitic capacity can be reduced. Further, a tapered angle on the side face of the ridge structure 22 is made gentle, preferably 20-55°, thereby improving coverage by the insulation film 18 to make a wire 19 difficult to break. COPYRIGHT: (C)2006,JPO&NCIPI
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