| 摘要 |
PROBLEM TO BE SOLVED: To eliminate an operational defect of a movable part caused by residual foreign matters (such as a remaining resist) in an optical switch. SOLUTION: When applying two steps of etching to a silicon active layer 2a of an SOI substrate 2 wherein the silicon active layer 2a, an intermediate layer 2b, a silicon supporting substrate 2c are laminated, a second masking pattern 21a to be used as a mask in the first step of etching and a first masking pattern 20a to be used as a mask in the second step of etching are formed in advance while overlapping with each other before etching the silicon active layer 2a, and are sequentially released in accordance with the etching steps, for etching the silicon active layer 2a. Furthermore, when applying the second step of etching to the silicon active layer 2a, the intermediate layer 2b is removed in advance. Thus, since neither resists nor resistant film 21 is formed between comb-teeth, so that intervals of comb-teeth or recesses 22b on the silicon supporting substrate 2c are kept excellent. COPYRIGHT: (C)2006,JPO&NCIPI
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