| 摘要 |
A semiconductor device is provided that includes: a base insulating film; a metal thin-film resistor that is provided on the base insulating film; a lower-layer insulating film that is formed under the base insulating film; and a wiring pattern that is formed on the lower-layer insulating film. In this semiconductor device, the base insulating film is formed on the lower-layer insulating film and the wiring pattern, and connecting holes are formed in the base insulating film located on the wiring patterns. The metal thin-film resistor has at least two belt-like portions and a return portion that continues to the belt-like portions. The belt-like portions are located at a distance from the region on the wiring pattern. The return portion connects at least two belt-like portions in a position at a distance from the region on the wiring pattern. The return portion is formed in a connecting hole via the region on the wiring pattern.
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