| 摘要 |
PROBLEM TO BE SOLVED: To obtain a porous silica and a porous silica thin film which have a low dielectric constant and high mechanical strength, for example, such ones as do not damage the electric connection reliability of a semiconductor device when used as a material for use in an interlayer insulator in the semiconductor device. SOLUTION: The manufacturing method, instead of the step of treating by heat in an vacuum or in an inert atmosphere or of firing in an oxidative atmosphere, comprises the steps of the heating treatment, the firing and the successive hydrophobization treatment. This method can give a hydrophobic porous silica which has little residues of such components affecting a bad influence on a semiconductor device as the surfactant for forming the pores, and which has a high void content and a low dielectric constant and also can give easily a thickened porous silica thin film on account of the easy control over the film thickness. COPYRIGHT: (C)2006,JPO&NCIPI
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