发明名称 |
Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor |
摘要 |
A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator capable of generating a high-voltage short pulse is provided. Thicknesses and impurity concentrations of a base region and a buffer region are determined such that a peak voltage obtained by a peak current at which a punch-through state is brought about does not exceed a breakdown voltage of the SIThy. Such design can achieve an SIThy having a self protecting function of autonomously preventing its breakdown without compromising a turn-on performance in which the peak voltage does not drastically exceed the breakdown voltage of the SIThy even when the peak current increases. Further, a compact SIThy capable of generating a short pulse can be achieved by reducing a gate-channel current-carrying area to a minimum.
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申请公布号 |
US2005218423(A1) |
申请公布日期 |
2005.10.06 |
申请号 |
US20050073967 |
申请日期 |
2005.03.07 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
SHIMIZU NAOHIRO;SEKIYA TAKAYUKI |
分类号 |
H01L29/74;H01L29/32;H01L29/739;H03K3/57;H03K17/567;(IPC1-7):H01L29/32 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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