Vertical cavity surface emitting semiconductor laser device

摘要

A vertical cavity surface emitting semiconductor laser (VCSEL) device has p-type and n-type DBRs sandwiching therebetween a resonant cavity including an active layer. Each the DBRs has a plurality of layer pairs each including a Al_x1Ga_1-x1As high-reflectivity layer and an Al_x2Ga_1-x2As low-reflectivity layer and an Al_x3Ga_1-x3As slope content layer interposed between each of the high-reflectivity layers and adjacent low-reflectivity layer. The slope content layers in the vicinity of the active layer has an Al content x 3 wherein 0 17 cm^-3 or above.