Memory device for improved reference current configuration

摘要

A memory device is composed of a memory array including floating gate memory cells; a sense amplifier designed to identify data stored in the memory array; and a reference current setting unit responsive to a trimming code for providing a reference current for the sense amplifier. The trimming code is defined as being all-0 for a reference current level most likely to identify data stored in the memory array as logic "1", and is defined as being all-1 for a reference current level most likely to identify data stored in the memory array as logic "0".