| 发明名称 |
METHOD OF PATTERN FORMING FOR METAL WIRING OF SEMICONDUCTOR DEVICE |
| 摘要 |
A method of forming metal wiring in a semiconductor device is disclosed. The method uses a dual damascene process in which a trench is formed prior to a via-hole. |
| 申请公布号 |
KR100519250(B1) |
申请公布日期 |
2005.10.06 |
| 申请号 |
KR20030087414 |
申请日期 |
2003.12.04 |
| 申请人 |
|
发明人 |
|
| 分类号 |
H01L21/3205;H01L21/4763;H01L21/768;H01L21/8242;H01L23/532;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/3205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
