SINTERED COMPACT OF FLUORINE-CONTAINING INDIUM-TIN OXIDE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide novel technology capable of manufacturing a high-density sintered compact for an F-ITO target in order to form a transparent conductive film having excellent surface smoothness.

SOLUTION: The method for manufacturing the sintered compact of the fluorine-containing indium-tin oxide comprising applying a DC pulse current under pressurization to powder raw materials containing indium, tin, oxygen and fluorine; the target material for sputtering composed of the sintered compact of the fluorine-containing indium-tin oxide obtained by the method described in the previous item; the thin film manufactured by using the target material for sputtering described in the previous item; the thin film, described in the previous item, wherein the ratio (surface smoothness; ΔZ/d) of the height difference (ΔZ; difference between the maximum value and minimum value of the film thicknesses) by the ruggedness of the thin film to the mean value (d) of the thin film thickness does not exceed 10%.

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