发明名称 |
METHOD FOR PRODUCING OXIDE SEMICONDUCTOR THIN FILM BY IRRADIATION WITH ULTRAVIOLET RADIATION |
摘要 |
PROBLEM TO BE SOLVED: To provide a technique by which a metal oxide thin film having electrical conductivity or a photocatalytic function can be formed on a specific part of a substrate by a simple operation. SOLUTION: An organic metal compound as a precursor of a desired metal oxide is dispersed in an organic solvent, and a substrate is immersed in the resulting organic metal compound dispersion and irradiated with laser light in an ultraviolet region (preferably ultraviolet laser having a long wavelength of≥300 nm) to form a thin film of the metal oxide on the irradiated part of the substrate. This method is suitable for producing a thin film of indium oxide, tin oxide, titanium oxide or the like. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2005272189(A) |
申请公布日期 |
2005.10.06 |
申请号 |
JP20040085867 |
申请日期 |
2004.03.24 |
申请人 |
JAPAN SCIENCE & TECHNOLOGY AGENCY |
发明人 |
NIITOME YASURO;HISANABE HIDEYUKI;YAMADA ATSUSHI |
分类号 |
C01B13/32;B01J35/02;C01G15/00;(IPC1-7):C01B13/32 |
主分类号 |
C01B13/32 |
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