发明名称 Electron beam writing method and lithography mask manufacturing method
摘要 A writing pattern to be a correcting object is divided by a rough mesh for a Foggy effect correction and a fine mesh for a proximity effect correction, a rate of an area occupied by the pattern to be written for each of the meshes is obtained, a stored energy based on a Foggy effect and a proximity effect in execution of exposure in a state in which a correction for a calculating object mesh is not carried out at all is calculated, an dose in the fine mesh for a proximity effect correction is obtained by a first calculation in such a manner that an influence of the Foggy effect and the proximity effect is reduced and a pattern and a dimension which can disregard the influence of the Foggy effect and the proximity effect are coincident with each other by the stored energy which is calculated, are calculation is carried out in such a manner that the pattern and the dimension which can disregard the influence of the Foggy effect and the proximity effect are coincident with each other with the influence of the Foggy effect and the proximity effect fixed, and the recalculation is repeated until desirable precision in a dimension is reached.
申请公布号 US2005221204(A1) 申请公布日期 2005.10.06
申请号 US20050094306 申请日期 2005.03.31
申请人 HOYA CORPORATION 发明人 KIMURA YASUKI
分类号 G03C5/00;G03F7/20;G03F9/00;H01J37/302;(IPC1-7):G03F9/00 主分类号 G03C5/00
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