| 摘要 |
A semiconductor device is provided with a P<-> type semiconductor substrate (15), an N<-> type semiconductor region (21) formed on the P<-> type semiconductor substrate (15), an upper side P type semiconductor region (13), which is formed on the front surface region of the N<-> type semiconductor region (21) and electrically connected with a grounding electrode (1), a lower side P type semiconductor region (14) formed under the upper side P type semiconductor region (13), a first N<+> type semiconductor region (22) electrically connected with a drain electrode (2), a P type semiconductor region (19) functioning as a channel forming region, a P<+> type semiconductor region (12) electrically connected with a back gate electrode (5), and a second N<+> type semiconductor region (23) electrically connected with a source electrode (4). The semiconductor device has a gate electrode (3) and a gate insulating film (31) on a P type semiconductor region (19). The lower side P type semiconductor device (14) extends to the side of the first N<+> type semiconductor region (22). |
